Afnan Kamal Yousif; Efaan Tariq Salim; Oday Ata Hamadi
Abstract
Abstract In this work , we presented results of an analytical investigation for the effect of carrier concentration and temperature of the active layer on the induced nonlinear properties ...
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Abstract In this work , we presented results of an analytical investigation for the effect of carrier concentration and temperature of the active layer on the induced nonlinear properties of the double - heterostructure or quantum well barrier semiconductor lasers operating at near infrared wavelengths . These results explained that the rate of amplified spontaneous emission is mainly produced from the spontaneous recombination process . Then the nonlinear behavior of such processmay affect laser operation with distortion and some instability for the modulated output beam .